Compositional dependence of Raman frequencies in SixGe1−x alloys
Compositional dependence of Raman frequencies in SixGe1−x alloys
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DOI：
10.1088/1674-4926/33/11/112001
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发表时间：
2012
影响因子：
5.1
通讯作者：
Wenli 文礼 Zheng 郑;T. Li 李
中科院分区：
文献类型：
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作者：
Wenli 文礼 Zheng 郑;T. Li 李
SixGe 1 −x合金的拉曼谱和Si含量的增加表明，Ge-Si和Si-Si模的频率明显上移，而Ge-Ge光模的频率则明显下移，这与其微观结构的变化密切相关.它们的力常数（键长和键角）变化引起的线性减小和增加，可以作为指纹来识别平均Si含量。通过拉曼光谱变换可以清楚地显示出随Si含量增加而引起的复杂的显微结构变化。
Increases in Si content and the calculated Raman spectra acquired from the SixGe1−x alloys reveal that the frequencies of the Ge—Si and Si—Si modes are up-shifted obviously, meanwhile that of the Ge—Ge optical mode is down-shifted, which is strongly dependent on their microstructural changes. The linear decrease and increase caused by their force constant (bond lengths and bond angles) changes, which can be used as a fingerprint to identify the average Si content. The complex microstructural changes induced by increasing Si content can be clearly displayed by Raman spectra transformation.