Effect of High-k Passivation Layer on Electrical Properties of GaN Metal-Insulator-Semiconductor Devices
Effect of High-k Passivation Layer on Electrical Properties of GaN Metal-Insulator-Semiconductor Devices
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DOI：
10.1109/icicdt.2019.8790844
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发表时间：
2019-06
期刊：
影响因子：
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通讯作者：
Yutao Cai;Yang Wang;Miao Cui;Wen Liu;H. Wen;Cezhou Zhao;I. Mitrovic;Stephen Taylor;P. Chalker
中科院分区：
文献类型：
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作者：
Yutao Cai;Yang Wang;Miao Cui;Wen Liu;H. Wen;Cezhou Zhao;I. Mitrovic;Stephen Taylor;P. Chalker
本文对具有高介电常数钝化层的GaN基金属绝缘体半导体高电子迁移率晶体管的击穿特性进行了二维模拟。结果表明，钝化层的介电常数越大，击穿电压越高，这是由于栅极漏极边缘的电场减小所致。此外，制备了三种不同钝化方式（Si 3 N4钝化、Al 2 O3/SiNx叠层钝化和ZrO 2/SiNx叠层钝化）的GaN基MIS-HEMT器件，并进行了比较。用ZrO 2/SiNx叠层钝化的MIS-HEMT的击穿电压为483 V，比用Si 3 N4钝化的MIS-HEMT高22%。此外，用SiNx或双层Al 2 O3/SiNx钝化的器件显示出显著的电流崩塌（分别为~33%和~ 8%），而双层ZrO 2/SiNx钝化的器件显示出可忽略的~ 1%的电流崩塌。
In this paper, a 2-D simulation of breakdown characteristics of GaN-based Metal Insulator Semiconductor High Electron Mobility Transistors with a high permittivity passivation layer was performed. As a result, it is found that the breakdown voltage is enhanced with permittivity of the passivation layer due to reduction of the electric field at the drain edge of gate. In addition, the GaN-based MIS-HEMTs with three different passivation (Si3N4 passivation, Al2O3/SiNx stack passivation and ZrO2/SiNx stack passivation) were fabricated and compared. The breakdown voltage of the MIS-HEMTs passivated with ZrO2/SiNx stack is 483 V, which is 22% higher than for the MIS-HEMTs with Si3N4 passivation. Moreover, the devices passivated with SiNx or bilayer Al2O3/SiNx show significant current collapse (~33% and ~8%, respectively), while the bilayer ZrO2/SiNx passivated devices exhibit negligible current collapse of ~1%.