State-of-the-Art Graphene High-Frequency Electronics
State-of-the-Art Graphene High-Frequency Electronics
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DOI：
10.1021/nl300904k
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发表时间：
2012-06-01
期刊：
影响因子：
10.8
通讯作者：
Lin, Yu-Ming
中科院分区：
文献类型：
--
作者：
Wu, Yanqing;Jenkins, Keith A.;Lin, Yu-Ming
用于射频应用的高性能石墨烯晶体管受到了人们的广泛关注，并取得了重大进展。然而，基于大面积合成石墨烯的设备具有直接的技术相关性，其性能通常仍优于基于机械剥离的石墨烯的设备。在这里，我们报告了本征截止频率超过300 GHz的器件，基于晶片规模的CVD生长的石墨烯和在碳化硅上外延的石墨烯，从而超过了以往任何石墨烯材料的记录。我们还展示了具有优化结构的器件，其电压和功率增益达到20dB，以及带有电压放大的圆片级集成石墨烯放大电路。
High-performance graphene transistors for radio frequency applications have received much attention and significant progress has been achieved. However, devices based on large-area synthetic graphene, which have direct technological relevance, are still typically outperformed by those based on mechanically exfoliated graphene. Here, we report devices with intrinsic cutoff frequency above 300 GHz, based on both wafer-scale CVD grown graphene and epitaxial graphene on SiC, thus surpassing previous records on any graphene material. We also demonstrate devices with optimized architecture exhibiting voltage and power gains reaching 20 dB and a wafer-scale integrated graphene amplifier circuit with voltage amplification.