Improved luminescence properties of Eu-doped GaN light-emitting diodes grown by atmospheric-pressure organometallic vapor phase epitaxy
Improved luminescence properties of Eu-doped GaN light-emitting diodes grown by atmospheric-pressure organometallic vapor phase epitaxy
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DOI：
10.1063/1.3478011
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发表时间：
2010-08-02
影响因子：
4
通讯作者：
Fujiwara, Y.
中科院分区：
文献类型：
--
作者：
Nishikawa, A.;Furukawa, N.;Fujiwara, Y.
研究了常压有机金属气相外延生长的掺Eu GaN（GaN：Eu）的发光特性。由于Eu ~（3+）离子在4f壳层内的跃迁，GaN：Eu在室温下呈现出红光发射。的主峰的强度是约4倍，高于在10 kPa下生长的样品中，即使Eu的浓度只有一半的10 kPa的样品。这主要是由于增强了从GaN基质到Eu离子的能量转移。增强的能量转移导致GaN：Eu发光二极管的发光性能改善。(C)2010年美国物理学会。[doi 10.1063/1.3478011]
We investigated the luminescence properties of Eu-doped GaN (GaN:Eu) grown by atmospheric-pressure organometallic vapor phase epitaxy. The GaN: Eu exhibited radiant red emission due to the intra-4f shell transition of Eu3+ ions at room temperature. The intensity of the dominant peak was about 4 times higher than that in the sample grown at 10 kPa, even though the Eu concentration was only half that of the 10 kPa sample. This was mainly caused by the enhancement of the energy transfer from the GaN host to Eu ions. The enhanced energy transfer resulted in improved luminescence properties of a GaN: Eu light-emitting diode. (C) 2010 American Institute of Physics. [doi:10.1063/1.3478011]