Positive and Negative Optical Responses in High-Electron Mobility Transistors and Their Applications to Optically Controlled Microwave Oscillators
Positive and Negative Optical Responses in High-Electron Mobility Transistors and Their Applications to Optically Controlled Microwave Oscillators
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高电子迁移率晶体管的正负光学响应及其在光控微波振荡器中的应用
DOI：
10.1143/jjap.43.997
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发表时间：
2003
影响因子：
1.5
通讯作者：
S. Yamamoto
中科院分区：
文献类型：
--
作者：
A. Ishikawa;H. Murata;Takuo Tanaka;H. Shiomi;Y. Okamura;S. Yamamoto
利用紧密聚焦光束研究了高电子迁移率晶体管的光学响应。根据光束辐照位置的不同，观察了hemt的正、负光学响应。在适当的直流偏置电压下，在hemt栅极附近照射光束，获得了正的光学响应。而光束在远离栅极的地方照射则得到负的光响应。通过10µW连续光束照射1 mA，观察到漏极电流的增加和减少。在微波频率范围内，hemt的小信号增益增减幅度可达5 dB。我们还将这些与辐照位置相关的正负光学响应应用于由HEMT组成的微波振荡器的光学控制。通过连续聚焦光脉冲的选择性照射，振荡器的11.7 GHz微波振荡在“开”和“关”之间切换。
We investigated optical responses of high-electron mobility transistors (HEMTs) by the use of a tightly focused optical beam. Positive and negative optical responses in the HEMTs were observed according to the irradiation position of the optical beam. The positive optical response was obtained by the optical beam irradiation close to the gate electrodes of the HEMTs with appropriate DC-bias voltages. While the negative optical response was obtained by the optical beam irradiation away from the gate electrodes. The light-induced increase and decrease of the drain currents were observed over 1 mA by the irradiation of a 10 µW CW light beam. The increase and decrease by as much as 5 dB of the small signal gain of the HEMTs in the microwave frequency range were also observed. We also applied these irradiation-position-dependent positive and negative optical responses to the optical control of the microwave oscillator composed of the HEMT. Microwave oscillations at 11.7 GHz from the oscillator were switched between “ON” and “OFF” by the selective irradiation of the successive focused light pulses.