Double patterning lithography: double the trouble or double the fun?
Double patterning lithography: double the trouble or double the fun?
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双图案光刻:双倍麻烦还是双倍乐趣?
DOI:
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发表时间:
2009
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影响因子:
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通讯作者:
P. Zimmerman
中科院分区:
文献类型:
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作者:
P. Zimmerman
Delays in readiness of next generation lithography (NGL) suggest the use of existing methods to enable the production of key technologies at the 32 and 22nm half-pitch nodes. In order to achieve this, some version of double patterning (DP) technology will need to be combined with established techniques. The most obvious of these is 193nm immersion (193i) lithography. Although the cost of ownership of a combined method is an issue, the huge opportunity costs of any NGL in its current state make DP lithography (DPL) the clear choice for the foreseeable future. What is unclear is the exact approach or combination of approaches that will provide the best resolution and the best economics for the 22nm node and beyond. Despite the lack of an obvious choice of methodology, DPL has already shown that it is lithography’s bridge to the 22nm node,1 producing a sixtransistor static random access memory (SRAM) cell under 0.1 μm2 nearly six months before a similarly scaled SRAM was produced using extreme ultraviolet lithography.2 Still, DP is a relative newcomer to lithography, brought on by necessity rather than any desire to embrace the methodology. For the lithography community, DP is double the trouble because there is no new breakthrough technology behind it. An alternative wavelength for photolithography is perhaps a decade away from being introduced into manufacturing, and no other lithography-based disruptive technologies are on the horizon. For process engineers around the world, however, DP is double the fun because of the new opportunities the technology offers. It comes in so many novel varieties (each with its own processing-related challenges) that process engineers everywhere are celebrating resulting in a new found popularity for DP within the lithography community. Figure 1. Schematic of two approaches to double patterning lithography. The litho-freeze process was developed subsequently to the lithoetch, litho-etch (LELE) approach. Si: silicon substrate.