Gallium-doped indium oxide nanoleaves: Structural characterization, growth mechanism and optical properties
Gallium-doped indium oxide nanoleaves: Structural characterization, growth mechanism and optical properties
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DOI：
10.1016/j.apsusc.2011.09.028
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发表时间：
2011-11
影响因子：
6.7
通讯作者：
Lizhu Liu;Yiqing Chen;Lin-Shan Guo;Taibo Guo;Yunqing Zhu;Yong Su;Chong Jia;Meiqin Wei;Yinfen Cheng
中科院分区：
文献类型：
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作者：
Lizhu Liu;Yiqing Chen;Lin-Shan Guo;Taibo Guo;Yunqing Zhu;Yong Su;Chong Jia;Meiqin Wei;Yinfen Cheng
以Cu-Sn合金为衬底，采用一步碳热蒸发法制备了新型二维Ga掺杂In 2 O3纳米叶。两个基本部分构成这种叶状纳米结构：一个长的中央主干和两个锥形纳米带对称分布的主干。Ga-In-O合金颗粒位于或靠近中心主干的尖端，并通过自催化汽-液-固（VLS）机制作为中心主干生长的催化剂。锥形纳米晶在中心主干表面的均匀外延生长可以用气固（VS）机制解释。室温光致发光（PL）测试结果表明，该纳米掺镓In 2 O3透明导电氧化物（TCO）在432 nm和481 nm处有两个蓝色发光峰，可用于钌基染料，在染料敏化太阳能电池（DSSC）中具有潜在的应用前景。这种新型二维Ga掺杂In 2 O3纳米叶的成功制备不仅丰富了TCO材料的合成方法，而且为未来功能纳米器件的构建提供了新的思路。
The novel two-dimensional (2-D) Ga-doped In2O3nanoleaves are synthesized by a simple one-step carbonthermal evaporation method using Cu–Sn alloy as the substrates. Two basic parts construct this leaf-like nanostructure: a long central trunk and two tapered nanoribbons in symmetric distribution in relation to the trunk. The Ga–In–O alloy particles are located at or close to the tips of the central trunks and serve as catalysts for the central trunk growth by the self-catalytic vapor–liquid–solid (VLS) mechanism. And the homoepitaxial growth of tapered nanoribbon on the surface of the central trunk can be explained by vapor–solid (VS) mechanism. The room-temperature photoluminescence (PL) measurement of this nanoscaled Ga-doped In2O3transparent conducting oxide (TCO) detected two blue peaks located at 432nm and 481nm, respectively, which can be used by Ru-based dye and indicates potential application in dye-sensitized solar cells (DSSCs). The successful preparation of this novel 2-D Ga-doped In2O3nanoleaves not only enriches the synthesis of TCO materials, but also provides new blocks in future architecture of functional nano-devices.