Optical mixing in InP-based high-electron mobility transistors by use of a focused laser beam
Optical mixing in InP-based high-electron mobility transistors by use of a focused laser beam
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使用聚焦激光束在 InP 基高电子迁移率晶体管中进行光学混合
DOI：
10.1109/cleo.2006.4628521
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发表时间：
2006
期刊：
影响因子：
--
通讯作者：
T. Enoki
中科院分区：
文献类型：
--
作者：
H. Murata;N. Kobayashi;Y. Okamura;T. Kosugi;T. Enoki
详细研究了聚焦激光入射到InP基超快速高电子迁移率晶体管(HEMTs)中的光学混频。给出了HEMT的位置相关光学响应和10 GHz的光信号探测。
Optical mixing in InP-based ultra-fast high-electron mobility transistors (HEMTs) using a focused laser beam onto the surface was studied in detail. Position-dependent optical responses in the HEMT and optical signal detection at 10 GHz were demonstrated.