Characterization of the Refractive Index of Strained GaInNAs Layers by Spectroscopic Ellipsometry
Characterization of the Refractive Index of Strained GaInNAs Layers by Spectroscopic Ellipsometry
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通过椭圆偏振光谱法表征应变 GaInNAs 层的折射率
DOI：
10.1143/jjap.37.753
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发表时间：
1998
影响因子：
1.5
通讯作者：
M. Okai
中科院分区：
文献类型：
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作者：
T. Kitatani;M. Kondow;K. Shinoda;Y. Yazawa;M. Okai
我们已经表征了应变GaInNAs层的折射率。利用椭圆偏振光谱（SE），可以清楚地观察到氮含量低于1%且厚度约为6 nm的GaInNAs层的光学常数变化。对SE数据的分析，包括层内的应变效应，澄清了GaInNAs的折射率随氮含量的增加而增加。虽然折射率随带隙能量的降低而增加的趋势与传统III-V合金半导体相同，但发现其增加速率远大于GaInAs。这一结果表明，在这种包含氮原子的材料系统的导带特性中存在大密度的态。
We have characterized the refractive index of strained GaInNAs layers. Using spectroscopic ellipsometry (SE), the variation in optical constants of GaInNAs layers, about 6 nm thick with a nitrogen content lower than 1%, can be clearly observed. Analysis of the SE data, including the strain effect in the layer, clarified that the refractive index of GaInNAs increases in proportion to the nitrogen content. While the trend for increase in refractive index with a decrease in the bandgap energy is the same as that observed in conventional III–V alloy semiconductors, the rate of increase is found to be much larger than that in GaInAs. This result suggests a large density of states in the conduction band characteristics of this type of material system that includes nitrogen atoms.
DOI：
10.1143/jjap.35.1273
发表时间：
1996-02-01
期刊：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
影响因子：
--
作者：
Kondow, M;Uomi, K;Yazawa, Y
通讯作者：
Yazawa, Y