Bi-ferroic memristive properties of multiferroic tunnel junctions
Bi-ferroic memristive properties of multiferroic tunnel junctions
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DOI：
10.1063/1.5023877
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发表时间：
2018-03
影响因子：
4
通讯作者：
Zheng‐Dong Luo;G. Apachitei;Ming-Min Yang;J. J. Peters-J.;A. Sánchez;M. Alexe
中科院分区：
文献类型：
--
作者：
Zheng‐Dong Luo;G. Apachitei;Ming-Min Yang;J. J. Peters-J.;A. Sánchez;M. Alexe
铁电隧道结的巨隧穿电阻（TER）和忆阻特性使其成为未来信息存储技术的候选材料。使用导电铁磁层作为电极导致多铁性隧道结（MFTJ），其显示自旋相关的输运。这种结构的隧穿磁电阻（TMR）可以通过电脉冲可逆地控制，由于铁电/铁磁界面处的铁电极化相关的自旋极化。在这里，我们展示了多层电控制的MFTJ的TMR和TER，这表明双铁性或磁电忆阻特性。这种效果是通过操纵的铁电畴配置经由非易失性部分铁电开关通过施加低电压脉冲的结获得实现。通过电调制上下极化铁电畴之间的比例，可以获得宽范围的TMR（在103%和1030%之间）和TER（在1000%和1000%之间）。
The giant tunnelling electroresistance (TER) and memristive behaviours of ferroelectric tunnel junctions make them promising candidates for future information storage technology. Using conducting ferromagnetic layers as electrodes results in multiferroic tunnel junctions (MFTJs) which show spin dependent transport. The tunnelling magnetoresistance (TMR) of such structures can be reversibly controlled by electric pulsing owing to ferroelectric polarisation-dependent spin polarisation at the ferroelectric/ferromagnetic interface. Here, we show multilevel electric control of both TMR and TER of MFTJs, which indicates the bi-ferroic or magneto-electric memristive properties. This effect is realised by manipulating the ferroelectric domain configuration via non-volatile partial ferroelectric switching obtained by applying low voltage pulses to the junction. Through electrically modulating the ratio between up- and down-polarised ferroelectric domains, a broad range of TMR (between ∼3% and ∼30%) and TER (∼1000%...