Transport properties of silicon implanted with bismuth
Transport properties of silicon implanted with bismuth
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铋注入硅的输运特性
DOI：
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发表时间：
1997
期刊：
影响因子：
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通讯作者：
H. Boudinov
中科院分区：
文献类型：
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作者：
E. Abramof;A. Silva;B. Sernelius;J. P. D. Souza;H. Boudinov
在硅片中描绘的范德波结构中。在相似的温度和掺杂浓度下，将测得的电阻率与广义德鲁德法计算的电阻率进行了比较，结果吻合较好。金属-非金属过渡的临界杂质浓度Nc约为2310 - 19 cm - 23。通过比较绝缘相的电离能与金属相的总能量，计算出临界浓度Nc。这个Nc值与实验得到的值和其他理论方法估计的值非常吻合。@s0163——1829 ~ 97 !01612 - 3 #
in Van der Pauw structures delineated in Si chips. The measured resistivities were compared with the ones calculated by a generalized Drude approach at similar temperatures and doping concentration, presenting fairly good agreement. The critical impurity concentration Nc of the metal-nonmetal transition was measured to be around 2310 19 cm 23 . The critical concentration Nc was calculated by comparing the ionization energy of the insulating phase with the total energy of the metallic phase. This value of Nc agreed very well with the one obtained experimentally and the values estimated from other theoretical approaches. @S0163-1829~97!01612-3#