Heteroepitaxial growth of InGaSb on GaSb/Si(111)-√3x√3-Ga surface phase with two step growth method to investigate the impact of high-quality GaSb buffer layer
Heteroepitaxial growth of InGaSb on GaSb/Si(111)-√3x√3-Ga surface phase with two step growth method to investigate the impact of high-quality GaSb buffer layer
复制标题
采用两步生长法在 GaSb/Si(111)-√3x√3-Ga 表面相上异质外延生长 InGaSb，研究高质量 GaSb 缓冲层的影响
DOI：
10.1002/pssb.201600528
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发表时间：
2016
期刊：
影响因子：
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通讯作者：
Masayuki Mori and Koichi Maezawa
中科院分区：
文献类型：
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作者：
A.A.Mohammad Monzur-Ul-Akhir;Masayuki Mori and Koichi Maezawa
采用两步法在GaSb/Si(111)-√3 × √3-Ga衬底上异质外延生长了InxGa1-xSb。为了生长没有孪晶的高质量GaSb层，精确地控制了Ga和Sb的缓冲层流量比，而外延InxGa1-xSb层的In和Ga的比例是不同的。在有和没有高质量GaSb缓冲层的情况下，薄膜沉积过程中的生长条件保持不变。以0.05为步长，比值范围为0.75至0.9。采用反射高能电子衍射仪(RHEED)、扫描电子显微镜(SEM)和X射线衍射仪(X射线衍射仪)对薄膜的生长进行了分析和比较。研究发现，高质量(HQ)GaSb缓冲层对于减少InGaSb层中的孪晶是必要的。
An investigation was performed on the heteroepitaxial growth of InxGa1–xSb on GaSb/Si(111)–√3 × √3‐Ga substrate following a two‐step growth method. The buffer layer flux ratio of Ga and Sb has been controlled precisely to grow a high‐quality GaSb layer without twins, whereas the ratio of In and Ga varied for epitaxial InxGa1–xSb layers. The growth conditions during film deposition were kept the same for growth with and without a high‐quality buffer layer of GaSb. The ratioxranges from 0.75 to 0.9 in steps of 0.05. To analyze and compare the growth, reflection high energy electron diffraction (RHEED), scanning electron microscopy (SEM) images, and X‐ray diffraction (XRD) have been performed and studied. It was found that the high‐quality (HQ) GaSb buffer layer is necessary to decrease twins in the growing InGaSb layer.