Investigation of InGaAs thermophotovoltaic cells under blackbody radiation
Investigation of InGaAs thermophotovoltaic cells under blackbody radiation
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黑体辐射下 InGaAs 热光伏电池的研究
DOI：
10.7567/apex.7.096601
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发表时间：
2014
影响因子：
2.3
通讯作者：
Yang Hui
中科院分区：
文献类型：
--
作者：
Tan Ming;Ji Lian;Wu Yuanyuan;Dai Pan;Wang Qingsong;Li Kuilong;Yu Ting;Yu Yao;Lu Shulong;Yang Hui
采用测量与理论计算相结合的方法，对带隙能量分别为0.6和0.74 eV的InGaAs热光伏电池在黑体辐射下的效率进行了标定。在1323 K的辐射温度下，0.6 eV的InGaAs电池效率为19.1%，0.74 eV的InGaAs电池效率为16.4%。黑体辐射和标准太阳光谱照明下的反向饱和电流密度和理想因子的显著差异表明，辐射光谱对器件的详细认识有显著影响。
The efficiency calibration of InGaAs thermophotovoltaic (TPV) cells with band gap energies of 0.6 and 0.74 eV under blackbody radiation is performed on the basis of the combination of measurement with theoretical calculation. Efficiencies of 19.1% for the 0.6 eV InGaAs cell and 16.4% for the 0.74 eV InGaAs cell are obtained at the radiation temperature of 1323 K. The notable differences in reverse saturation current density and ideality factors under the blackbody radiation and standard solar spectrum illumination indicate the significant effect of the radiation spectrum on the detailed understanding of devices.