Diameter dependent transport properties of gallium nitride nanowire field effect transistors
Diameter dependent transport properties of gallium nitride nanowire field effect transistors
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DOI：
10.1063/1.2434153
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发表时间：
2007-01-22
影响因子：
4
通讯作者：
Mohammad, S. N.
中科院分区：
文献类型：
--
作者：
Motayed, Abhishek;Vaudin, Mark;Mohammad, S. N.
作者报告了单个GaN纳米线场效应晶体管的传输特性测量以及这些纳米线中存在的晶界与电子迁移率的相关性。室温场效应电子迁移率高达319 cm（2）V-1 s（-1）的直径为200 nm的纳米线。从这些可靠的纳米线场效应晶体管计算的迁移率表明，表面散射在较小直径的纳米线中起着主导作用，而对于中等直径的器件，传输主要由晶界散射。随着纳米线直径的减小，迁移率的降低可以用“连续表面”模型来解释。(c)2007年，美国物理学会。
The authors report transport property measurements of individual GaN nanowire field effect transistors and the correlation of the electron mobilities with the existence of grain boundaries in these nanowires. Room temperature field effect electron mobilities as high as 319 cm(2) V-1 s(-1) were obtained for the 200 nm diameter nanowires. Mobilities calculated from these reliable nanowire field effect transistors indicated that the surface scattering plays a dominant role in smaller diameter nanowires, whereas for intermediate diameter devices transport is dominated by grain boundary scattering. Reduction of the mobility with decreasing diameter of nanowires can be explained using "continuous surface" model. (c) 2007 American Institute of Physics.