SIMS investigations into the effect of growth conditions on residual impurity and silicon incorporation in GaN and AlxGa1−xN
SIMS investigations into the effect of growth conditions on residual impurity and silicon incorporation in GaN and AlxGa1−xN
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DOI：
10.1007/s11664-000-0087-3
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发表时间：
2000
影响因子：
2.1
通讯作者：
G. Parish;Sarah L. Keller;S. Denbaars;Umesh K. Mishra
中科院分区：
文献类型：
--
作者：
G. Parish;Sarah L. Keller;S. Denbaars;Umesh K. Mishra
我们研究了金属有机化学气相沉积生长条件对GaN和AlGaN中杂质掺入的影响。二次离子质谱深度剖面分析进行了GaN和AlGaN晶片与多层，其中温度，V/III比，生长速率，载气，Al含量，和Si掺杂的变化。研究了氧、碳和硅浓度的趋势。对于GaN和AlGaN两者观察到类似的趋势。生长温度，组成和V/III比杂质掺入的影响最大。硅和氧的掺入比碳对生长条件不太敏感。
We have investigated the effect of metal-organic chemical vapour deposition growth conditions on impurity incorporation in GaN and AlGaN. Secondary ion mass spectrometry depth profile analyses were performed on GaN and AlGaN wafers with multiple layers in which temperature, V/III ratio, growth rate, carrier gas, Al content, and Si doping were varied. Trends in oxygen, carbon, and silicon concentrations were studied. Similar trends were observed for both GaN and AlGaN. Growth temperature, composition and V/III ratio had the largest effect on impurity incorporation. Silicon and oxygen incorporation were less susceptible to growth conditions than that of carbon.