Luminescence dynamics in type-II GaAs/AlAs superlattices near the type-I to type-II crossover.
Luminescence dynamics in type-II GaAs/AlAs superlattices near the type-I to type-II crossover.
复制标题
II 型 GaAs/AlAs 超晶格中 I 型到 II 型交叉附近的发光动力学。
DOI：
10.1103/physrevb.54.14589
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发表时间：
1996
期刊：
影响因子：
--
通讯作者：
Hvam
中科院分区：
文献类型：
--
作者：
Langbein;Kalt;Hvam
Mikroelektronik Centret，The Technical University of丹麦，Building 345 East，DK-2800 Lyngby，丹麦~ 1996年3月14日收稿; 1996年6月27日收稿！我们报告的时间分辨发光的II型GaAs/AlAs超晶格附近的类型Ito类型II交叉的研究。尽管有轻微的II型带排列，发光主要是由I型跃迁。这是由于I型跃迁的不均匀加宽和弱的II型散射强度，导致深局域I型态的主导发光。这些局域态的弛豫与跳跃模型一致。在较高的温度和激发密度下，AlAs X极小值作为电子库，导致发光延迟时间的强烈增加。@S1050-2947~96！03743-2#I.介绍
Mikroelektronik Centret, The Technical University of Denmark, Building 345 East, DK-2800 Lyngby, Denmark~Received 14 March 1996; revised manuscript received 27 June 1996!We report on a study of the time-resolved luminescence of type-II GaAs/AlAs superlattices near the type-Ito type-II crossover. In spite of the slight type-II band alignment, the luminescence is dominated by the type-Itransition. This is due to the inhomogeneous broadening of the type-I transition and the weak type-II oscillatorstrength, leading to a dominant luminescence of deeply localized type-I states. The relaxation within theselocalized states is found to be in agreement with a hopping model. At higher temperatures and excitationdensities, the AlAs X minima act as an electron reservoir, leading to a strong increase of the luminescencedecay time. @S1050-2947~96!03743-2#I. INTRODUCTION