Weak Van der Waals Stacking, Wide-Range Band Gap, and Raman Study on Ultrathin Layers of Metal Phosphorus Trichalcogenides
Weak Van der Waals Stacking, Wide-Range Band Gap, and Raman Study on Ultrathin Layers of Metal Phosphorus Trichalcogenides
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DOI：
10.1021/acsnano.5b05927
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发表时间：
2016-02-01
期刊：
影响因子：
17.1
通讯作者：
Kloc, Christian
中科院分区：
文献类型：
--
作者：
Du, Ke-zhao;Wang, Xing-zhi;Kloc, Christian
二维半导体金属三硫属磷化合物，特别是MPS 3（M = Fe，Mn，Ni，Cd和Zn）硫化物和MPSe 3（M = Fe和Mn）硒化物的块体晶体，已经合成，结晶和剥离成单层。单层FePS_3和三层FePSe_3的拉曼光谱表明，在室温条件下，FePSe_3具有较强的层内振动和原子级薄层的结构稳定性。可以通过在1.3- 3.5eV范围内选择元素来调节带隙。宽范围的带隙表明它们在宽波长范围内的光电应用。MPS 3的解理能比石墨的解理能小。因此，用于通过货车德瓦耳斯堆叠来构建异质结构的单层可以被认为是具有不寻常的铁电和磁性的人工2D材料的候选者。
2D semiconducting metal phosphorus trichalcogenides, particularly the bulk crystals of MPS3 (M = Fe, Mn, Ni, Cd and Zn) sulfides and MPSe3 (M = Fe and Mn) selenides, have been synthesized, crystallized and exfoliated into monolayers. The Raman spectra of monolayer FePS3 and 3-layer FePSe3 show the strong intralayer vibrations and structural stability of the atomically thin layers under ambient condition. The band gaps can be adjusted by element choices in the range of 1.3-3.5 eV. The wide-range band gaps suggest their optoelectronic applications in a broad wavelength range. The calculated cleavage energies of MPS3 are smaller than that of graphite. Therefore, the monolayers used for building of heterostructures by van der Waals stacking could be considered as the candidates for artificial 2D materials with unusual ferroelectric and magnetic properties.