205-GHz (Al,In)N/GaN HEMTs
205-GHz (Al,In)N/GaN HEMTs
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DOI：
10.1109/led.2010.2055826
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发表时间：
2010-08
影响因子：
4.9
通讯作者：
Haifeng Sun;A. Alt;H. Benedickter;E. Feltin;J. Carlin;M. Gonschorek;N. Grandjean;C. Bolognesi
中科院分区：
文献类型：
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作者：
Haifeng Sun;A. Alt;H. Benedickter;E. Feltin;J. Carlin;M. Gonschorek;N. Grandjean;C. Bolognesi
我们报道了55 nm栅极AlinN/GaN高电子迁移率晶体管(HEMTs)，其室温短路电流增益截止频率为FT=205 GHz，这是GaN基HEMTs的新记录。该器件在VGS=0V时的最大电流密度为2.3A/mm，测量的跨导为575ms/mm，这是迄今为止报道的非凹槽栅氮化物HEMT的最高值。与最先进的AlGaN/GaN HEMT的比较表明，AlGaN/GaN器件在高场输运条件下受益于有利的沟道速度。
We report 55-nm gate AlInN/GaN high-electron-mobility transistors (HEMTs) featuring a short-circuit current gain cutoff frequency of fT = 205 GHz at room temperature, a new record for GaN-based HEMTs. The devices source a maximum current density of 2.3 A/mm at VGS = 0 V and show a measured transconductance of 575 mS/mm, which is the highest value reported to date for nonrecessed gate nitride HEMTs. Comparison to state-of-the-art thin-barrier AlGaN/GaN HEMTs suggests that AlInN/GaN devices benefit from an advantageous channel velocity under high-field transport conditions.