Dendritic Growth of InSb
Dendritic Growth of InSb
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InSb的枝晶生长
DOI：
10.1149/1.2425905
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发表时间：
1963
影响因子：
3.9
通讯作者：
J. Faust
中科院分区：
文献类型：
--
作者：
H. Nicholson;J. Faust
结论氚水可用于钽阳极氧化膜表面及膜内氢浓度的检测。残留的氢可能以一种以上的形式存在，如在生长期间和生长后吸附的活性的不同热行为所证明的，尽管化学物质的确切性质是未知的。氢的计算浓度被认为是在范围内，影响电介质薄膜的电性能，需要进一步的研究，以确定其相对重要性沿着与其他杂质和缺陷的阳极氧化膜。
ConclusionTritiated water was used to detect the hydrogen concentration on or in anodized tantalum films. Residual hydrogen may be present in more than one form, as evidenced by the different thermal behavior of activity sorbed during and after growth, although the exact nature of the chemical species is unknown. The calculated concentration of hydrogen was found to be in the range to influence the electrical properties of dielectric thin films; further studies are needed to identify its relative importance along with other impurities and defects in anodized films.