Electroabsorption based on quantum-confined Stark effect from Ge/SiGe multiple quantum wells
Electroabsorption based on quantum-confined Stark effect from Ge/SiGe multiple quantum wells
复制标题
基于Ge/SiGe多量子阱量子限制斯塔克效应的电吸收
DOI：
10.1117/12.922095
复制
发表时间：
2012
期刊：
影响因子：
--
通讯作者：
L. Vivien
中科院分区：
文献类型：
--
作者：
P. Chaisakul;D. Marris‐Morini;G. Isella;D. Chrastina;M. Rouifed;J. Frigerio;E. Gatti;X. Le roux;S. Edmond;E. Cassan;J. Coudevylle;L. Vivien
报道了高速 Ge 多量子阱 (MQW) 电吸收 (EA) 调制器。描述了通过 LEPECVD 技术外延生长高质量 Ge MQW 的器件开发过程、光电器件的制造和表征。
High speed Ge multiple quantum well (MQWs) electro-absorption (EA) modulator is reported. Device development procedures from the epitaxial growth of high quality Ge MQWs by LEPECVD technique, fabrication, and characterization of optoelectronic device are described.