GaN nanowire tips for nanoscale atomic force microscopy
GaN nanowire tips for nanoscale atomic force microscopy
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DOI：
10.1088/1361-6528/aa6c0b
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发表时间：
2017-05-19
期刊：
影响因子：
3.5
通讯作者：
Busani, Tito
中科院分区：
文献类型：
--
作者：
Behzadirad, Mahmoud;Nami, Mohsen;Busani, Tito
由于大多数可用的商业尖端的机械性能和圆锥形几何形状，通过原子力显微镜（AFM）在纳米尺度计量中具有尖锐边缘和直壁的高纵横比纳米结构的成像一直具有挑战性。在这里，我们报告的GaN探针的高纵横比结构的纳米尺度计量，以提高AFM成像的分辨率和提高AFM针尖的耐用性的制造。采用自底向上和自顶向下技术制备GaN纳米线，并将其键合到Si悬臂梁上以扫描Si衬底上的垂直沟槽。在几次扫描中，GaN探针在扫描不均匀结构时表现出优异的耐用性，并且与商业Si探针相比，在形貌图像中显示出独立于扫描方向的分辨率增强。
Imaging of high-aspect-ratio nanostructures with sharp edges and straight walls in nanoscale metrology by atomic force microscopy (AFM) has been challenging due to the mechanical properties and conical geometry of the majority of available commercial tips. Here we report on the fabrication of GaN probes for nanoscale metrology of high-aspect-ratio structures to enhance the resolution of AFM imaging and improve the durability of AFM tips. GaN nanowires were fabricated using bottom-up and top-down techniques and bonded to Si cantilevers to scan vertical trenches on Si substrates. Over several scans, the GaN probes demonstrated excellent durability while scanning uneven structures and showed resolution enhancements in topography images, independent of scan direction, compared to commercial Si tips.