Wafer bonding approaches for III-V on Si multi-junction solar cells
Wafer bonding approaches for III-V on Si multi-junction solar cells
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硅多结太阳能电池上 III-V 族的晶圆键合方法
DOI：
10.1109/pvsc.2017.8366093
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发表时间：
2017
期刊：
影响因子：
--
通讯作者：
C. Dupré
中科院分区：
文献类型：
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作者：
L. Vauche;E. Veinberg;C. Weick;C. Morales;V. Larrey;C. Lecouvey;Mickael Martin;J. D. Fonseca;C. Jany;T. Desrues;Celine Brughera;P. Voarino;T. Salvetat;F. Fournel;M. Baudrit;C. Dupré
在本研究中，采用不同的晶圆键合方法制备了单片三结（3J） GaInP/AlGaAs/Si太阳能电池：(i)最直接的GaAs/Si晶圆键合；（ii）在硅晶片上外延GaAs键合层，然后进行GaAs/GaAs直接晶片键合的创新两步方法；（iii）表面活化GaAs/Si晶圆键合（SAB）。比较研究了键合界面的性能，并对所得的III-V在Si三结器件上的性能进行了检验。在所有情况下都可以获得接近2.9V的开路电压，但观察到不同键合方法之间的填充系数差异很大，这可能是由于氧化层的存在。
In this study, fabrication of monolithic triple junction (3J) GaInP/AlGaAs/Si solar cells is reported by different wafer bonding approaches: (i) the most straightforward, direct GaAs/Si wafer bonding; (ii) an innovative 2-step approach combining epitaxy of GaAs bonding layer on Si cell followed by GaAs/GaAs direct wafer bonding; and (iii) Surface-Activated GaAs/Si wafer Bonding (SAB). Bonding interfaces properties are comparatively studied, and the performance of resulting III-V on Si triple junction devices is examined. Open-circuit voltages close to 2.9V are obtained in all cases, but large differences in fill factors between the bonding methods are observed, probably due to the presence of an oxide layer.