Characterization of an Organic Field-Effect Thin-Film Transistor in Operation Using Fluorescence-Yield X-Ray Absorption Spectroscopy
Characterization of an Organic Field-Effect Thin-Film Transistor in Operation Using Fluorescence-Yield X-Ray Absorption Spectroscopy
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DOI：
10.1103/physrevlett.107.147401
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发表时间：
2011-09-30
影响因子：
8.6
通讯作者：
Kawai, Maki
中科院分区：
文献类型：
--
作者：
Kato, Hiroyuki S.;Yamane, Hiroyuki;Kawai, Maki
在原位元素特定的观察金属电极下的有机薄膜的电子状态是通过X射线吸收光谱（XAS）在体敏感的荧光产额（FY）模式。利用C K边FY-XAS光谱证实了Au包覆的寡聚噻吩薄膜中的分子取向，并首次成功地探测到了光谱的偏压依赖性。该方法可以更深入地了解各种实际设备系统在操作条件下的电子状态调查。
In situ element-specific observation of electronic states of organic films beneath metal electrodes is achieved by x-ray absorption spectroscopy (XAS) in the bulk-sensitive fluorescence-yield (FY) mode. The molecular orientation in Au-covered oligo-thiophene films is confirmed by the C K-edge FY-XAS spectra and the applied bias dependence of the spectra is successfully detected for the first time. The present method can give deeper insights into the electronic-state investigation of various real-device systems under operational conditions.