Electrodeposition of Epitaxial Co on Ru(0001)/Al 2 O 3 (0001)
Electrodeposition of Epitaxial Co on Ru(0001)/Al 2 O 3 (0001)
复制标题
Ru(0001)/Al 2 O 3 (0001)上外延Co电沉积
DOI：
10.1149/2.1091915jes
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发表时间：
2019
影响因子：
3.9
通讯作者：
Barmak, Katayun
中科院分区：
文献类型：
--
作者：
Gusley, Ryan;Sentosun, Kadir;Ezzat, Sameer;Coffey, Kevin R.;West, Alan C.;Barmak, Katayun
在Al2O3（0001）上外延沉积60 nm厚的Ru（0001）层，在500 ℃下通过真空溅射沉积，然后在950 ℃下分步退火（非原位）。在室温下从含有稀Co金属离子的酸性电解液（pH = 3.8）电沉积Co层。以前未报道的，钴在Ru（0001）的欠电位沉积（UPD）的证据，并被证明影响恒电位电沉积过程中的钴的成核。该结果表明Co和Ru衬底之间的强相互作用对于外延生长是必要的。横截面透射电子成像和衍射证实了在Ru（0001）上形成的Co（0001）外延层达到了用于互连间隙填充的实际厚度。这一发现表明，在未来的集成电路芯片的电沉积，单晶互连的可扩展性。
The 60 nm-thick Ru (0001) layer was deposited epitaxially onto Al 2 O 3 (0001) by ultrahigh vacuum (UHV) sputter deposition at 500 C followed by a step anneal (ex situ) to 950 C. The Co layer was electrodeposited at room temperature from an acidic electrolyte (pH= 3.8) containing dilute Co metal ions. Previously unreported, evidence for the underpotential deposition (UPD) of Co on Ru (0001) is presented and was shown to affect the nucleation of Co during constant potential electrodeposition. This result demonstrates a strong interaction between Co and the Ru substrate necessary for epitaxial growth. Cross-sectional transmission electron imaging and diffraction confirmed the formation of an epitaxial layer of Co (0001) on Ru (0001) to practical thicknesses for interconnect gap-fill. This finding suggests the plausibility of electrodeposited, single crystal interconnects in future integrated circuit chips.