Patterned Radial GaAs Nanopillar Solar Cells
Patterned Radial GaAs Nanopillar Solar Cells
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DOI：
10.1021/nl200965j
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发表时间：
2011-06-01
期刊：
影响因子：
10.8
通讯作者：
Huffaker, Diana L.
中科院分区：
文献类型：
--
作者：
Mariani, Giacomo;Wong, Ping-Show;Huffaker, Diana L.
利用无催化剂的选择性区域金属有机化学气相沉积，展示了使用GaAs纳米柱径向p-n结的光伏器件。具有均匀间距和尺寸的纳米线的密集、大面积、光刻限定的垂直阵列允许该材料系统的2.54%（AM 1.5G）的功率转换效率和213的高整流比（在+/-1V下）。不存在金属催化剂污染导致在-1 V下类似于236 nA的漏电流。高分辨率扫描光电流显微镜测量揭示了阵列中每个纳米线的独立功能，在544 nm下具有类似于1 nA的单独峰值光电流。外量子效率表明，光生载流子的提取高度依赖于简并掺杂的透明接触氧化物。采用两种不同的顶部电极方案，其特征在于在霍尔，薄层电阻，和光学透射率测量。
Photovoltaic devices using GaAs nanopillar radial p-n junctions are demonstrated by means of catalyst-free selective-area metal-organic chemical vapor deposition. Dense, large-area, lithographically defined vertical arrays of nanowires with uniform spacing and dimensions allow for power conversion efficiencies for this material system of 2.54% (AM 1.5 G) and high rectification ratio of 213 (at +/-1 V). The absence of metal catalyst contamination results in leakage currents of similar to 236 nA at -1 V. High-resolution scanning photocurrent microscopy measurements reveal the independent functioning of each nanowire in the array with an individual peak photocurrent of similar to 1 nA at 544 nm. External quantum efficiency shows that the photocarrier extraction highly depends on the degenerately doped transparent contact oxide. Two different top electrode schemes are adopted and characterized in terms of Hall, sheet resistance, and optical transmittance measurements.