Experimental evidence of ferroelectric negative capacitance in nanoscale heterostructures
Experimental evidence of ferroelectric negative capacitance in nanoscale heterostructures
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DOI：
10.1063/1.3634072
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发表时间：
2011-09-12
影响因子：
4
通讯作者：
Salahuddin, Sayeef
中科院分区：
文献类型：
--
作者：
Khan, Asif Islam;Bhowmik, Debanjan;Salahuddin, Sayeef
我们报告了在纳米级铁电介质异质结构中负电容效应的概念验证演示。在铁电Pb(Zr0.2Ti0.8)O-3和介电SrTiO3双层中，复合电容大于组分SrTiO3电容，表明组分Pb(Zr0.2Ti0.8)O-3层具有有效的负电容。温度是铁电负电容和异质结构中电容增强程度的有效调节参数。基于朗道平均场论的计算结果与观测结果在定性上一致。这项工作支持了在纳米级晶体管中用铁电体取代栅极氧化物的可能性，亚阈值斜率可以降低到经典极限（60 mV/ 10年）以下。(C) 2011年美国物理研究所。(doi: 10.1063/1.3634072)
We report a proof-of-concept demonstration of negative capacitance effect in a nanoscale ferroelectric-dielectric heterostructure. In a bilayer of ferroelectric Pb(Zr0.2Ti0.8)O-3 and dielectric SrTiO3, the composite capacitance was observed to be larger than the constituent SrTiO3 capacitance, indicating an effective negative capacitance of the constituent Pb(Zr0.2Ti0.8)O-3 layer. Temperature is shown to be an effective tuning parameter for the ferroelectric negative capacitance and the degree of capacitance enhancement in the heterostructure. Landau's mean field theory based calculations show qualitative agreement with observed effects. This work underpins the possibility that by replacing gate oxides by ferroelectrics in nanoscale transistors, the sub threshold slope can be lowered below the classical limit (60 mV/decade). (C) 2011 American Institute of Physics. [doi:10.1063/1.3634072]