Probing the Bonding and Electronic Structure of Single Atom Dopants in Graphene with Electron Energy Loss Spectroscopy
Probing the Bonding and Electronic Structure of Single Atom Dopants in Graphene with Electron Energy Loss Spectroscopy
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DOI：
10.1021/nl304187e
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发表时间：
2013-10-01
期刊：
影响因子：
10.8
通讯作者：
Scott, Andrew J.
中科院分区：
文献类型：
--
作者：
Ramasse, Quentin M.;Seabourne, Che R.;Scott, Andrew J.
扫描透射电子显微镜、电子能量损失谱和从头计算的结合揭示了石墨烯中两种不同的单取代Si缺陷几何形状之间显着的电子结构差异。优化的采集条件允许光谱数据中的异常信噪比水平。近边缘精细结构可以很高的精度进行比较，以模拟和揭示一个sp（3）样配置的三价硅或更复杂的杂化结构的四价硅杂质。
A combination of scanning transmission electron microscopy, electron energy loss spectroscopy, and ab initio calculations reveal striking electronic structure differences between two distinct single substitutional Si defect geometries in graphene. Optimised acquisition conditions allow for exceptional signal-to-noise levels in the spectroscopic data. The near-edge fine structure can be compared with great accuracy to simulations and reveal either an sp(3)-like configuration for a trivalent Si or a more complicated hybridized structure for a tetravalent Si impurity.