Formation of Sn nanocrystals in thin SiO2 film using low-energy ion implantation
Formation of Sn nanocrystals in thin SiO2 film using low-energy ion implantation
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DOI：
10.1063/1.120470
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发表时间：
1997-12-22
影响因子：
4
通讯作者：
Yokoyama, N
中科院分区：
文献类型：
--
作者：
Nakajima, A;Futatsugi, T;Yokoyama, N
这封信报道了一种简单的技术，用于制造锡纳米晶体在薄二氧化硅膜使用低能量离子注入，然后热退火。这些Sn纳米晶体具有优异的尺寸均匀性和位置可控性。它们的平均直径为4.8 nm，标准偏差为1.0 nm，大部分Sn纳米晶位于相同的深度。相邻Sn纳米晶体之间的横向边到边间距相当恒定：约3 nm。窄的注入离子分布轮廓和SiO_2-Si界面的影响被认为有助于尺寸均匀性和位置可控性，这些纳米晶体的特性将为新型器件开辟新的可能性。(C)1997年美国物理学会。[S0003-6951（97）01451-4]。
This letter reports on a simple technique for fabricating Sn nanocrystals in thin SiO2 film using low-energy ion implantation followed by thermal annealing. These Sn nanocrystals have excellent size uniformity and position controllability. Their average diameter is 4.8 nm with a standard deviation of 1.0 nm, Most of the Sn nanocrystals reside at the same depth. The lateral edge-to-edge spacing between neighboring Sn nanocrystals is fairly constant: about 3 nm. A narrow as-implanted ion distribution profile and the effect of the SiO2-Si interface are considered to contribute to the size uniformity and position controllability, The features of these nanocrystals will open up new possibilities for novel devices. (C) 1997 American Institute of Physics. [S0003-6951(97)01451-4].