The influence of double pulse delay and ambient pressure on femtosecond laser ablation of silicon
The influence of double pulse delay and ambient pressure on femtosecond laser ablation of silicon
复制标题
双脉冲延迟和环境压力对飞秒激光烧蚀硅的影响
DOI：
10.1016/j.optlastec.2014.06.017
复制
发表时间：
2015-03-01
影响因子：
5
通讯作者：
Hu, Zhan
中科院分区：
文献类型：
--
作者：
Qi, Ying;Qi, Hongxia;Hu, Zhan
The effects of double pulse delay time and ambient pressure on femtosecond laser ablation of Si are studied by means of photoluminescence and morphology analysis. Detailed scan of double pulse delay is performed at vacuum (2 Pa) and atmospheric pressure, and detailed scan of pressure is performed at three double pulse delay times of 0.2 ps, 53.13 ps and 106.47 ps. It is found that, at various fluences, photoluminescence intensity and morphology change as functions of both double pulse delay and ambient pressure. Especially, the shape of the splashing droplets also changes at different experimental conditions, indicating higher or lower sample temperature. The observations are explained by the efficiently energy coupling between the second pulse and the liquid layer produced by the first one, and the pressure dependent energy coupling between plasma and liquid phase as well as ambient gas. (C) 2014 Elsevier Ltd. All rights reserved.
