Spatially resolved photoluminescence of inversion domain boundaries in GaN-based lateral polarity heterostructures
Spatially resolved photoluminescence of inversion domain boundaries in GaN-based lateral polarity heterostructures
复制标题
DOI：
10.1063/1.1390486
复制
发表时间：
2001-08
影响因子：
4
通讯作者：
P. Schuck;Michael D. Mason;R. Grober;O. Ambacher;A. P. Lima;C. Miskys;R. Dimitrov;M. Stutzmann
中科院分区：
文献类型：
--
作者：
P. Schuck;Michael D. Mason;R. Grober;O. Ambacher;A. P. Lima;C. Miskys;R. Dimitrov;M. Stutzmann
利用高空间分辨率光致发光技术，在低温下对定向生长的横向极性异质结GaN反转磁区边界(IDB)进行了光谱成像。结果表明，IDB不仅具有光学活性，而且比GaN块体材料的亮度高一个数量级以上。我们的发现与预测IDB不应该因为没有中间禁带电子态而对近禁带光致发光产生不利影响的计算是一致的。典型的线宽在10-20 meV量级，然而，观察到小于0.6 meV的特征。边界辐射在光谱和空间上都不是均匀的。此外，还测量了IDB光致发光的强烈偏振相关性，并确定其取向平行于N面极性或Ga面极性的GaN之间的边界。
Intentionally grown GaN inversion domain boundaries (IDBs) of lateral polarity heterostructures have been spectroscopically imaged at low temperature using high spatial resolution photoluminescence. It is shown that the IDBs are not only optically active, but are more than an order of magnitude brighter than the GaN bulk material. Our findings are in agreement with calculations predicting that IDBs should not adversely affect near-band-gap photoluminescence due to the absence of midgap electronic states. Typical linewidths are on the order of 10–20 meV, however, features less than 0.6 meV are observed. The boundary emission is found to be neither spectrally nor spatially uniform. Also, a strong polarization dependence of the IDB photoluminescence is measured and determined to be oriented parallel to the boundary between GaN of N- or Ga-face polarity.