Reduced thermal resistance of membrane Fabry-Perot laser bonded on Si through room-temperature, surface-activated bonding assisted by a-Si nano-film
Reduced thermal resistance of membrane Fabry-Perot laser bonded on Si through room-temperature, surface-activated bonding assisted by a-Si nano-film
复制标题
通过非晶硅纳米膜辅助的室温表面活化键合，降低法布里-珀罗激光键合在硅上的膜的热阻
DOI：
10.1109/jqe.2022.3145870
复制
发表时间：
2022
影响因子：
2.5
通讯作者：
N. Nishiyama
中科院分区：
文献类型：
--
作者：
W. Fang;N. Takahashi;Y. Ohiso;T. Amemiya;N. Nishiyama
基于硅衬底的薄膜分布反射器（DR）激光器具有低阈值电流和足够的输出功率，是一种很有前途的片上光互连光源。苯并环丁烯（BCB）粘接键合或亲水性键合技术已被用于薄膜激光器与硅的集成。然而，BCB的导热系数较低，导致薄膜激光器的热阻较高，并且两种键合技术的过程都需要退火。因此，键合晶片积累了热应力。在本研究中，我们引入化学机械抛光（CMP）工艺来平整晶圆表面，并研究基于Ar快原子束（FAB）的表面激活键合（SAB），在a- si层的辅助下实现室温键合。基于这种室温键合技术，首次展示了一种膜法布里-珀罗（FP）激光器，并测量了其热特性。与具有2-厚BCB键合层的传统膜FP激光器（40 mA）相比，获得了更高的光学饱和电流（55 mA）。从激光波长随散热功率和温度的变化可知，去除BCB层后，激光的热阻降低了约50% (240 K/W ~ 120 K/W)；模拟结果也显示了相同的趋势。
A membrane distributed-reflector (DR) laser bonded on a Si substrate is a promising light source for on-chip optical interconnection, as it features a low threshold current and enough output power. Benzocyclobutene (BCB) adhesive wafer-bonding or hydrophilic bonding technologies have been used to integrate the membrane laser with Si. However, the thermal conductivity of BCB is low, which results in a high thermal resistance of the membrane laser, and the process of both bonding technologies requires annealing. Thus, the bonded wafer accumulated thermal stress. In this study, we introduce a chemical mechanical polishing (CMP) process to flatten the wafer surface and investigate the surface activated bonding (SAB) based on an Ar fast atom beam (FAB) assisted by an a-Si layer to achieve a room temperature bonding. Based on this room temperature bonding technology, a membrane Fabry-Perot (FP) laser is demonstrated for the first time, and its thermal characteristics are measured. A higher optical saturation current (55 mA) was obtained compared to that of the conventional membrane FP laser (40 mA) with a 2--thick BCB bonding layer. From the lasing wavelength variation against the heat dissipation power and temperature, it was found that a reduction in thermal resistance of approximately 50% (240 K/W to 120 K/W) was achieved by eliminating the BCB layer; the simulation results also showed the same trend.