Perspectives and recent advances of two-dimensional III-nitrides: Material synthesis and emerging device applications
Perspectives and recent advances of two-dimensional III-nitrides: Material synthesis and emerging device applications
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DOI：
10.1063/5.0145931
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发表时间：
2023-04
影响因子：
4
通讯作者：
Yuanpeng Wu;Ping Wang;Woncheol Lee;A. Aiello;P. Deotare;Theodore Norris;P. Bhattacharya;M. Kira
中科院分区：
文献类型：
--
作者：
Yuanpeng Wu;Ping Wang;Woncheol Lee;A. Aiello;P. Deotare;Theodore Norris;P. Bhattacharya;M. Kira
二维（2D）过渡金属二硫属化物（TMD）和III-V族半导体都被认为是量子技术的潜在平台。虽然2D TMD表现出大的激子结合能，并且它们的量子特性可以通过异质结构堆叠来定制，但TMD技术目前受到与现有工业过程不兼容的限制。相反，III族氮化物已被广泛用于发光器件和电力电子器件，但没有利用激子量子方面。最近的演示二维III-氮化物引入激子结合能媲美TMD，有希望实现室温量子技术也与III-氮化物的可能性。在这里，我们讨论了2D III族氮化物合成和表征的最新进展，重点关注2D自支撑结构和嵌入式超薄量子威尔斯。我们概述了材料合成中的主要障碍，重要的解决方案，以及使激子和量子光发射器成为可能的2D III族氮化物的精致光学特性。
Both two-dimensional (2D) transitional metal dichalcogenides (TMDs) and III–V semiconductors have been considered as potential platforms for quantum technology. While 2D TMDs exhibit a large exciton binding energy, and their quantum properties can be tailored via heterostructure stacking, TMD technology is currently limited by the incompatibility with existing industrial processes. Conversely, III-nitrides have been widely used in light-emitting devices and power electronics but not leveraging excitonic quantum aspects. Recent demonstrations of 2D III-nitrides have introduced exciton binding energies rivaling TMDs, promising the possibility to achieve room-temperature quantum technologies also with III-nitrides. Here, we discuss recent advancements in the synthesis and characterizations of 2D III-nitrides with a focus on 2D free-standing structures and embedded ultrathin quantum wells. We overview the main obstacles in the material synthesis, vital solutions, and the exquisite optical properties of 2D III-nitrides that enable excitonic and quantum-light emitters.