Cascading Wafer-Scale Integrated Graphene Complementary Inverters under Ambient Conditions
Cascading Wafer-Scale Integrated Graphene Complementary Inverters under Ambient Conditions
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DOI：
10.1021/nl301079r
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发表时间：
2012-08-01
期刊：
影响因子：
10.8
通讯作者：
Sordan, Roman
中科院分区：
文献类型：
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作者：
Rizzi, Laura Giorgia;Bianchi, Massimiliano;Sordan, Roman
数字电子的基本构建模块是逻辑门，它们必须能够级联，以便实现更复杂的逻辑功能。在这里，我们展示了集成的石墨烯互补逆变器，其以相同的输入和输出电压逻辑电平工作，从而允许级联。我们在环境条件下获得信号匹配与反相器从晶圆级石墨烯生长的化学气相沉积（CVD）。单层石墨烯被结合在自对准场效应晶体管中，其中顶栅与源极和漏极接触重叠。这导致全沟道选通，并导致在空气环境中操作的顶栅CVD石墨烯器件中迄今为止报道的最高低频电压增益，A（v）类似于-5。这种增益使逻辑反相器在其输入和输出处具有0.56 V的相同电压摆幅。石墨烯逆变器可以在实际应用中找到自己的方式，其中需要高速操作，但功耗不是问题，类似于发射极耦合逻辑。
The fundamental building blocks of digital electronics are logic gates which must be capable of cascading such that more complex logic functions can be realized. Here we demonstrate integrated graphene complementary inverters which operate with the same input and output voltage logic levels, thus allowing cascading. We obtain signal matching under ambient conditions with inverters fabricated from wafer scale graphene grown by chemical vapor deposition (CVD). Mono layer graphene was incorporated in self-aligned field-effect transistors in which the top gate overlaps with the source and drain contacts. This results in full-channel gating and leads to the highest low-frequency voltage gain reported so far in top-gated CVD graphene devices operating in air ambient, A(v) similar to -5. Such gain enabled logic inverters with the same voltage swing of 0.56 V at their input and output. Graphene inverters could find their way in realistic applications where high-speed operation is desired but power dissipation is not a concern, similar to emitter-coupled logic.