Low-loss photonic device in Ge-Sb-S chalcogenide glass
Low-loss photonic device in Ge-Sb-S chalcogenide glass
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DOI：
10.1364/ol.41.003090
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发表时间：
2016-07-01
期刊：
影响因子：
3.6
通讯作者：
Hu, Juejun
中科院分区：
文献类型：
--
作者：
Du, Qingyang;Huang, Yizhong;Hu, Juejun
低损耗光波导是集成光子系统的重要组成部分。在这项工作中，我们研究了在Ge23Sb7S70硫系玻璃中利用电子束光刻和等离子体干法刻蚀制备低损耗光子器件。高折射率对比度光波导和本征品质因数(Q因子)为1.2×10(6)的微盘谐振器的传输损耗为0.5分贝/厘米。据我们所知，这两个数字代表了迄今为止在亚微米单模硫化物玻璃器件中报道的最好的低损耗结果。(C)2016年度美国光学学会
Low-loss waveguides constitute an important building block for integrated photonic systems. In this work, we investigated low-loss photonic device fabrication in Ge23Sb7S70 chalcogenide glass using electron beam lithography followed by plasma dry etching. High-index-contrast waveguides with a low propagation loss of 0.5 dB/cm and microdisk resonators with an intrinsic quality factor (Q-factor) of 1.2 x 10(6) were demonstrated. Both figures represent, to the best of our knowledge, the best low-loss results reported thus far in submicrometer single-mode chalcogenide glass devices. (C) 2016 Optical Society of America