Scanned potential microscopy of edge and bulk currents in the quantum Hall regime
Scanned potential microscopy of edge and bulk currents in the quantum Hall regime
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DOI：
10.1103/physrevb.59.4654
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发表时间：
1999-02-15
影响因子：
3.7
通讯作者：
Harris, JS
中科院分区：
文献类型：
--
作者：
McCormick, KL;Woodside, MT;Harris, JS
利用原子力显微镜作为局域电压计，测量了量子霍尔（QH）体系中二维电子气的霍尔电压分布。我们观察到的QH高原和高原上的一个明显的非线性配置文件之间的过渡区域中的大部分样品中的线性配置文件。此外，在过渡区中的样品边缘处观察到局部电压降。我们解释这些结果在QH制度的边缘和体电流的理论。[S0163-1829（99）02908-2]。
Using an atomic force microscope as a local voltmeter, we measure the Hall voltage profile in a two-dimensional electron gas in the quantum Hall (QH) regime. We observe a linear profile in the bulk of the sample in the transition regions between QH plateaus and a distinctly nonlinear profile on the plateaus. In addition, localized voltage drops an observed at the sample edges in the transition regions. We interpret these results in terms of theories of edge and bulk current in the QH regime. [S0163-1829(99)02908-2].