Modeling random telegraph noise under switched bias conditions using cyclostationary RTS noise
Modeling random telegraph noise under switched bias conditions using cyclostationary RTS noise
复制标题
使用循环平稳 RTS 噪声对切换偏置条件下的随机电报噪声进行建模
DOI：
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发表时间：
2003
期刊：
影响因子：
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通讯作者：
B. Nauta
中科院分区：
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作者：
A. P. V. D. Wel;E. Klumperink;L. Vandamme;B. Nauta
在本文中，我们提出了随机电报信号（RTS）噪声的测量和模拟在n沟道MOSFET周期性大信号栅源激励（开关偏置条件）。这一点与模拟CMOS电路设计尤其相关，在这种电路设计中，会出现大信号摆幅，并且LF噪声通常是电路性能的限制因素。测量结果表明，稳态偏置条件相比，RTS噪声可以减少，但也增加时，设备受到切换偏置条件。我们表明，一个简单的模型的平稳噪声产生过程，其输出调制的偏置电压是不足以解释开关偏置测量结果。相反，我们提出了一个基于循环平稳RTS噪声生成的模型。使用我们的模型，我们可以正确地模拟不同MOSFET在开关偏置条件下表现出的各种不同类型的LF噪声行为。我们表明，测量结果可以解释使用现实值的偏置依赖性的/spl tau//sub c/和/spl tau//sub e/。
In this paper, we present measurements and simulation of random telegraph signal (RTS) noise in n-channel MOSFETs under periodic large signal gate-source excitation (switched bias conditions). This is particularly relevant to analog CMOS circuit design where large signal swings occur and where LF noise is often a limiting factor in the performance of the circuit. Measurements show that, compared to steady-state bias conditions, RTS noise can decrease but also increase when the device is subjected to switched bias conditions. We show that the simple model of a stationary noise generating process whose output is modulated by the bias voltage is not sufficient to explain the switched bias measurement results. Rather, we propose a model based on cyclostationary RTS noise generation. Using our model, we can correctly model a variety of different types of LF noise behavior that different MOSFETs exhibit under switched bias conditions. We show that the measurement results can be explained using realistic values for the bias dependency of /spl tau//sub c/ and /spl tau//sub e/.