High-harmonic generation in GaAs beyond the perturbative regime
High-harmonic generation in GaAs beyond the perturbative regime
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砷化镓中超出微扰状态的高次谐波产生
DOI：
10.1103/physrevb.104.l121202
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发表时间：
2021
影响因子：
3.7
通讯作者：
and Takeo Kato
中科院分区：
文献类型：
--
作者：
Peiyu Xia;Tomohiro Tamaya;Changsu Kim;Faming Lu;Teruto Kanai;Nobuhisa Ishii;Jiro Itatani;Hidefumi Akiyama;and Takeo Kato
研究了块状砷化镓中高次谐波产生的场强依赖关系。我们在实验上发现，在微扰标度律不再成立的高场中，这种振荡行为是存在的。通过构建基于Luttinger-Kohn模型的理论框架，我们成功地再现了观察到的振荡行为。实验和理论的定性一致表明，在非微扰区，场诱导的动态能带修正是至关重要的。我们表明，这种振荡行为可以通过基于Floquit子带图像的动态局域化来自然地理解。
The field-intensity dependence of high-harmonic generation in bulk gallium arsenide is studied. We experimentally find the oscillatory behavior at high fields where a perturbative scaling law no longer holds. By constructing a theoretical framework based on the Luttinger-Kohn model, we succeed in reproducing the observed oscillatory behavior. The qualitative agreement between the experiment and theory indicates that field-induced dynamic band modification is crucial in the nonperturbative regime. We show that the oscillatory behavior is naturally understood by dynamic localization that is based on the the Floquet subband picture.