GaInNAs/GaAs quantum dots grown by chemical beam epitaxy
GaInNAs/GaAs quantum dots grown by chemical beam epitaxy
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DOI：
10.1016/s0022-0248(00)00778-8
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发表时间：
2000-12-01
影响因子：
1.8
通讯作者：
Iga, K
中科院分区：
文献类型：
--
作者：
Makino, S;Miyamoto, T;Iga, K
GaInNAs/GaAs量子点（QD）结构有望成为延长GaAs基激光器发射波长的新型材料之一。在这项工作中，我们首次利用氮自由基化学束外延（CBE）生长了GaInNAs量子点。研究了氮引入对QD形成的影响。我们发现，当N含量达到1.5%时，供氮量对网点密度和尺寸有较大影响。当N含量为1%时，最大点密度为1.2 × 10(11) cm（-2）。在室温（RT）下获得了峰值波长为1.1 μ m的GaInNAs量子点光致发光（PL）。与相同条件下生长的GaInAs量子点相比，除了引入N外，峰值波长略有红移。这一结果被认为是由于N的引入减小了带隙。在77 K的脉冲条件下，获得了GaInNAs量子点激光器的第一次激光操作。(C) 2000 Elsevier Science B.V.版权所有
GaInNAs/GaAs quantum dot (QD) structure is expected to be one of the novel materials to extend the emission wavelength of GaAs-based lasers. In this work, we have grown GaInNAs QDs by chemical beam epitaxy (CBE) with nitrogen radicals for the first time. The effect of nitrogen (N) introduction to the QD formation was investigated. We found that the dot density and size were strongly influenced by the supplied N quantity for the N composition up to 1.5%. The maximum dot density of 1.2 x 10(11) cm(-2) was obtained at 1% of N composition. A photoluminescence (PL) from GaInNAs QDs was obtained at room temperature (RT) with a peak wavelength of 1.1 mum. The peak wavelength was slightly red-shifted in comparison with GaInAs QDs grown under the same condition except N introduction. This result is considered as the reduction of the band gap by the N introduction. The first lasing operation was also obtained from a GaInNAs QDs laser under pulsed condition at 77 K. (C) 2000 Elsevier Science B.V. All rights reserved.