Control of PS-b-PMMA directed self-assembly registration by laser induced millisecond thermal annealing
Control of PS-b-PMMA directed self-assembly registration by laser induced millisecond thermal annealing
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通过激光诱导毫秒热退火控制 PS-b-PMMA 定向自组装配准
DOI：
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发表时间：
2014
期刊：
影响因子：
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通讯作者：
M. Thompson
中科院分区：
文献类型：
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作者：
A. Jacobs;B. Jung;C. Ober;M. Thompson
研究了PS-b-PMMA在峰值温度为300-800°C、停留时间为1- 10 ms的激光峰退火过程中的定向自组装。与传统的热退火相比，聚合物链在这些温度下的流动性增强改善了配准性。PS-b-PMMA薄膜（形成15 nm的线/空间直立片层）浇铸在具有共聚物中性层的化学图案衬底上，并通过激光和热板（2分钟250°C）退火。热板退火或多次激光扫描导致微米长度尺度上排列良好的特征。通过多次激光退火，缺陷率可降低~60%。然而，在进行热板退火之前仅进行10毫秒的激光退火，将缺陷降低了约80%。此外，缺陷更常被定位为位错对，而不是垂直于潜在定向模式的区域，从而导致更大的总排列。
Directed self-assembly of PS-b-PMMA during laser spike annealing at peak temperatures of 300-800°C for dwells of 1- 10 ms has been explored. The enhanced mobility of polymer chains at these temperatures improves registration compared to conventional thermal anneals. PS-b-PMMA films (forming 15 nm line/space standing lamellae) were cast on chemically patterned substrates with a copolymer neutral layer and annealed by laser and hot-plate (2 minutes 250°C). Annealing by hot plate or multiple laser scans resulted in well-aligned features over micron length scales. By laser annealing multiple times, defectivity can be reduced by ~60%. However, laser annealing for only 10 ms before performing a hot plate anneal reduced defectivity by ~80%. Additionally, defects are more often localized as dislocation pairs rather than regions perpendicular to the underlying directing pattern resulting in far greater total alignment.