Growth of FexNi1−x ultrathin films on Cu(100) near the invar concentration

Growth of FexNi1−x ultrathin films on Cu(100) near the invar concentration
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在殷钢浓度附近的 Cu(100) 上 FexNi1−x 超薄膜的生长

DOI:
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发表时间:
1997
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影响因子:
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通讯作者:
R. F. Willis
R. F. Willis
中科院分区:
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文献类型:
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作者:
F. Schumann;Shan Wu;R. F. Willis

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我们在Cu(100)衬底上外延生长了不同化学计量比的Ni-Fe_xNi_(1 −x)薄膜。以前的测量结果表明,Tc的Fe 75 Ni 25合金的厚度依赖性的偏差,这是没有观察到较小的Fe浓度。因此,我们更仔细地研究了在该因瓦合金浓度附近的生长。利用基于电荷耦合器件相机的采集系统,我们观察了在因瓦浓度附近生长过程中反射高能电子衍射图样的演变。这使我们能够确定顶层的面内晶格常数。高达66%Fe含量,我们看到类似于Co/Cu(100)系统的面内晶格常数振荡[Fassbender等人,物理修订信函75,4476(1995)]。在80%的铁含量,这些振荡被抑制,我们也观察到晶格收缩预期从最近的计算。我们讨论了这些结果与我们以前的结果的磁性FexNi 1-x的薄膜。
We have grown ultrathin FexNi1−x films epitaxially on Cu(100) with different stoichiometry. Previous measurements showed a deviation of the thickness dependence of Tc for a Fe75Ni25 alloy, which was not observed for smaller Fe concentrations. Therefore, we investigated the growth near this invar concentration more closely. With a charge coupled device camera based acquisition system, we observed the evolution of the reflection high-energy electron diffraction pattern during growth near the invar concentration. This allows us to determine the in-plane lattice constant of the top layer. Up to 66% Fe content, we see in-plane lattice constant oscillations similar to the Co/Cu(100) system [Fassbender et al., Phys. Rev. Lett. 75, 4476 (1995)]. At 80% Fe content, these oscillations are suppressed and we observe also a lattice contraction as expected from recent calculations. We discuss these results in connection with our previous results on the magnetic properties of FexNi1−x ultrathin films.