Annealing properties of open volumes in strained SiN films studied by monoenergetic positron beams
Annealing properties of open volumes in strained SiN films studied by monoenergetic positron beams
复制标题
DOI：
10.1063/1.2781571
复制
发表时间：
2007-09
影响因子：
3.2
通讯作者：
A. Uedono;Kazuki Ito;T. Narumi;M. Sometani;K. Yamabe;Y. Miyagawa;T. Murata;K. Honda;N. Hattori;M. Matsuura;K. Asai;T. Ohdaira;R. Suzuki
中科院分区：
文献类型：
--
作者：
A. Uedono;Kazuki Ito;T. Narumi;M. Sometani;K. Yamabe;Y. Miyagawa;T. Murata;K. Honda;N. Hattori;M. Matsuura;K. Asai;T. Ohdaira;R. Suzuki
用单能正电子束研究了用等离子体增强化学气相沉积方法在硅衬底上沉积的应变氮化硅薄膜中退火对空穴体积的影响。对于压缩SiN，沉积后热处理降低了应力；这种效应归因于基质结构的松弛，伴随着基质中固有的小开放空间的扩展和大开放体积的引入。对于拉伸SiN，虽然退火会降低大空隙的浓度，但小空隙的大小和薄膜的应力在1000℃以下几乎保持不变。这归因于与开阔空间相关的网络结构即使在1000℃下也保持稳定，这主要决定了拉伸薄膜中的应力。
The effect of annealing on open volumes in strained SiN films deposited on Si by plasma enhanced chemical vapor deposition was studied using monoenergetic positron beams. For compressive SiN, the stress was reduced by postdeposition annealing; this effect was attributed to the relaxation of matrix structures accompanied by an expansion of small open spaces intrinsically existing in the matrix and the introduction of large open volumes. For tensile SiN, although annealing tends to decrease the concentration of large open volumes, the size of the small open spaces and the film stress were almost constant up to 1000°C annealing. This was attributed to the network structure related to the open spaces remaining stable even at 1000°C annealing, and this mainly determines the stress in the tensile film.