Hot carrier effects in InGaZnO thin-film transistor
Hot carrier effects in InGaZnO thin-film transistor
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DOI：
10.7567/1882-0786/ab3c43
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发表时间：
2019-09-01
影响因子：
2.3
通讯作者：
Uraoka, Yukiharu
中科院分区：
文献类型：
--
作者：
Takahashi, Takanori;Miyanaga, Ryoko;Uraoka, Yukiharu
研究了InGaZnO（IGZO）薄膜晶体管（TFT）的光子发射和电学特性，阐明了热载流子的存在及其影响。从IGZO-TFT的漏极边缘观察到光子发射，并且电容-电压特性表明，当器件由30 V的高漏极电压驱动时，在漏极区域形成势垒。基于这些结果，IGZO-TFT的光子发射现象是由热载流子引起的，这应该被认为是高-高性能氧化物半导体器件。(C)2019日本应用物理学会
Photon emission and the electrical characteristics of a InGaZnO (IGZO) thin-film transistor (TFT) were evaluated to clarify the existence of hot carriers and their effects. The photon emission was observed from the drain edge of the IGZO-TFT and the capacitance-voltage characteristics indicated that a potential barrier was formed at the drain region when the device is driven by high drain voltage of 30 V. Based on these results, the photon emission phenomenon from the IGZO-TFT was induced by hot carriers that should be considered as a significant degradation mode for a high-performance oxide semiconductor device. (C) 2019 The Japan Society of Applied Physics