ZnO nanowire field-effect transistor and oxygen sensing property
ZnO nanowire field-effect transistor and oxygen sensing property
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DOI：
10.1063/1.1836870
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发表时间：
2004-12-13
影响因子：
4
通讯作者：
Lu, JG
中科院分区：
文献类型：
--
作者：
Fan, ZY;Wang, DW;Lu, JG
采用气相捕获化学气相沉积法合成了单晶ZnO纳米线，并将其配置为场效应晶体管。电输运研究表明，载流子浓度接近10(7)cm(-1)，电子迁移率接近17 cm(2)/V s的n型半导体行为。Au/Ni电极和纳米线之间的接触肖特基势垒是由电导的温度依赖性决定的。发现热离子发射主导了输运机制。研究了氧吸附对电子在纳米线中传递的影响。纳米线的半径越小，对氧的灵敏度越高。此外，氧探测灵敏度可以通过栅极电压调制。这些结果表明ZnO具有很高的纳米级传感应用潜力。(C) 2004年美国物理研究所。
Single-crystal ZnO nanowires are synthesized using a vapor trapping chemical vapor deposition method and configured as field-effect transistors. Electrical transport studies show n-type semiconducting behavior with a carrier concentration of similar to10(7) cm(-1) and an electron mobility of similar to17 cm(2)/V s. The contact Schottky barrier between the Au/Ni electrode and nanowire is determined from the temperature dependence of the conductance. Thermionic emission is found to dominate the transport mechanism. The effect of oxygen adsorption on electron transport through the nanowires is investigated. The sensitivity to oxygen is demonstrated to be higher with smaller radii nanowires. Moreover, the oxygen detection sensitivity can be modulated by the gate voltage. These results indicate that ZnO holds high potential for nanoscale sensing applications. (C) 2004 American Institute of Physics.