The fabrication of ZnO nanowire field-effect transistors by roll-transfer printing
The fabrication of ZnO nanowire field-effect transistors by roll-transfer printing
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DOI：
10.1088/0957-4484/20/19/195302
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发表时间：
2009-05-13
期刊：
影响因子：
3.5
通讯作者：
Hong, Franklin Chau-Nan
中科院分区：
文献类型：
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作者：
Chang, Yi-Kuei;Hong, Franklin Chau-Nan
本研究提出一种可制作大面积奈米线场效电晶体的方法。使用高速辊（20-80 cm min（-1）），成功地采用转移印刷将在供体衬底上生长的垂直排列的氧化锌（ZnO）纳米线转移到聚二甲基硅氧烷（PDMS）印模上，然后将有序的ZnO纳米线阵列印刷在接收的衬底上用于制造NW-FET。用该方法制备的ZnO NW-FET具有高性能，阈值电压约为0.25 V，电流开/关比高达10（5），亚阈值斜率为360 mV/dec，场效应迁移率约为90 cm（2）V（-1）s（-1）。优异的器件特性表明，辊转移印刷技术，这是兼容的卷到卷（R2 R）的过程中，并在大气中操作，具有良好的潜力，用于柔性器件和平板显示器的大面积纳米线晶体管的高速制造。
A method with the potential to fabricate large-area nanowire field-effect transistors (NW-FETs) was demonstrated in this study. Using a high-speed roller (20-80 cm min(-1)), transfer printing was successfully employed to transfer vertically aligned zinc oxide (ZnO) nanowires grown on a donor substrate to a polydimethylsiloxane (PDMS) stamp and then print the ordered ZnO nanowire arrays on the received substrate for the fabrication of NW-FETs. ZnO NW-FETs fabricated by this method exhibit high performances with a threshold voltage of around 0.25 V, a current on/off ratio as high as 10(5), a subthreshold slope of 360 mV/dec, and a field-effect mobility of around 90 cm(2) V(-1) s(-1). The excellent device characteristics suggest that the roll-transfer printing technique, which is compatible with the roll-to-roll (R2R) process and operated in atmosphere, has a good potential for the high-speed fabrication of large-area nanowire transistors for flexible devices and flat panel displays.