Sub-terahertz and terahertz generation in long-wavelength quantum cascade lasers
Sub-terahertz and terahertz generation in long-wavelength quantum cascade lasers
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DOI：
10.1515/nanoph-2019-0238
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发表时间：
2019-12-01
期刊：
影响因子：
7.5
通讯作者：
Dougakiuchi, Tatsuo
中科院分区：
文献类型：
--
作者：
Fujita, Kazuue;Hayashi, Shohei;Dougakiuchi, Tatsuo
具有腔内非线性混频的太赫兹量子级联激光源是第一个工作在1.2-5.9太赫兹光谱范围内的室温电泵浦单片半导体源。然而，在低频范围内的高性能是困难的，因为转换的太赫兹波在波导中受到显著的高吸收。本文报道了一种亚太赫兹电泵浦单片半导体激光器。这个亚太赫兹源是基于一个高性能的，长波长（λ近似于13.7 μ m）量子级联激光器，其中高效的太赫兹产生发生。该器件在常温下615-788 GHz频率范围内的峰值输出功率为11 μ W。此外，发射频率为1.5太赫兹的源在110 K时的峰值输出功率为287 μ W。产生的太赫兹辐射
Terahertz quantum cascade laser sources with intra-cavity non-linear frequency mixing are the first room-temperature electrically pumped monolithic semiconductor sources that operate in the 1.2-5.9 THz spectral range. However, high performance in low-frequency range is difficult because converted terahertz waves suffer from significantly high absorption in waveguides. Here, we report a sub-terahertz electrically pumped monolithic semiconductor laser. This sub-terahertz source is based on a high-performance, long-wavelength (lambda approximate to 13.7 mu m) quantum cascade laser in which high-efficiency terahertz generation occurs. The device produces peak output power of 11 mu W within the 615-788 GHz frequency range at room temperature. Additionally, a source emitting at 1.5 THz provides peak output power of 287 mu W at 110 K. The generated terahertz radiation of