Field-Effect Tunable and Broadband Epsilon-Near-Zero Perfect Absorbers with Deep Subwavelength Thickness
Field-Effect Tunable and Broadband Epsilon-Near-Zero Perfect Absorbers with Deep Subwavelength Thickness
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DOI：
10.1021/acsphotonics.7b01373
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发表时间：
2018-07-01
期刊：
影响因子：
7
通讯作者：
Lee, Ho Wai Howard
中科院分区：
文献类型：
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作者：
Anopchenko, Aleksei;Tao, Long;Lee, Ho Wai Howard
我们报告完美的光吸收由于激发的约束和辐射p-偏振的光学模式在ε-近零（ENZ）导电氧化物纳米层的厚度薄的λ（ENZ）/100。对于电子密度为5 × 10（20）至2 × 10（21）cm（-3）的未图案化的氧化铟锡（ITO）纳米层，可以在600 nm至2 μ m的波长范围内实现完美吸收。具有电子密度梯度和优化厚度的ITO纳米层的多层堆叠能够实现宽带完美吸收。在金属氧化物半导体（MOS）的几何形状与所施加的电压为5 V的制造后调谐，完美的吸收波长，为32 nm。这种可调谐的宽带完美吸收体在非线性平坦ENZ光学，热光电转换，热电子产生ENZ制度，和其他领域有许多潜在的应用。
We report perfect light absorption due to the excitation of bound and radiative p-polarized optical modes in epsilon-near-zero (ENZ) conducting oxide nanolayers with thicknesses as thin as lambda(ENZ)/100. Perfect absorption in the wavelength range of 600 nm to 2 mu m may be achieved for unpatterned indium tin oxide (ITO) nanolayers with an electron density of 5 x 10(20) to 2 x 10(21) cm(-3). Multilayer stacks of ITO nanolayers with a gradient of electron densities and optimized thicknesses enable broadband perfect absorption. The postfabrication tuning, of the perfect absorption wavelength, of 32 nm is achieved in a metal-oxide-semiconductor (MOS) geometry with applied voltage of 5 V. Such ultrathin and tunable broadband perfect absorbers have many potential applications in nonlinear flat ENZ optics, thermophotovoltaics, hot-electron generation in the ENZ regime, and other fields.