Interface induced inverse spin Hall effect in bismuth/permalloy bilayer
Interface induced inverse spin Hall effect in bismuth/permalloy bilayer
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DOI：
10.1063/1.4738786
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发表时间：
2012-07-23
影响因子：
4
通讯作者：
Saitoh, E.
中科院分区：
文献类型：
--
作者：
Hou, Dazhi;Qiu, Z.;Saitoh, E.
在室温下，利用自旋抽运技术研究了铋（Bi）/坡莫合金（Py）双层膜的反自旋霍尔效应。从铁磁共振谱线宽数据，Bi被证明是一个很好的自旋阱在我们的结构。我们测量了Bi/Py双层膜的反自旋霍尔电压和电导，发现反自旋霍尔电流I-c随着Bi厚度的增加而减小，这与以前在类似双层膜系统中的理解相反，例如，患者/患者我们建立了一个模型来定量地解释I-c的厚度依赖性，其中考虑了Bi/Py界面附近的自旋输运调制。(C)2012年美国物理学会。[http：//dx.doi.org/10.1063/1.4738786]
Inverse spin Hall effect has been investigated in bismuth(Bi)/permalloy(Py) bilayer films by using the spin pumping at room temperature. From the ferromagnetic-resonance-spectrum linewidth data, Bi is proved to be a good spin sink in our structure. We measured inverse spin Hall voltage and conductance of the Bi/Py bilayer and found that the inverse spin Hall current, I-c, decreases with increasing the Bi thickness, which is in contrast to the former understanding in similar bilayer systems, e.g., Pt/Py. We constructed a model to explain the thickness dependence of I-c quantitatively, in which spin transport modulation near Bi/Py interface is considered. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4738786]