Large-Area Bilayer ReS2 Film/Multilayer ReS2 Flakes Synthesized by Chemical Vapor Deposition for High Performance Photodetectors

Large-Area Bilayer ReS2 Film/Multilayer ReS2 Flakes Synthesized by Chemical Vapor Deposition for High Performance Photodetectors
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用于高性能光电探测器的化学气相沉积法合成的大面积双层 ReS2 薄膜/多层 ReS2 薄片

DOI:
10.1002/adfm.201601019
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发表时间:
2016-07-05
影响因子:
19
通讯作者:
Zhai, Tianyou
Zhai, Tianyou
中科院分区:
材料科学1区
文献类型:
--
作者:
Hafeez, Muhammad;Gan, Lin;Zhai, Tianyou

文献摘要

被引文献

相似文献

二硫化铼(ReS 2)由于其厚度依赖的直接带隙而受到越来越多的关注。作为一种新出现的二维过渡金属二硫属化物,化学气相沉积法(CVD)合成方法的研究还很少。本文系统地研究了连续双层ReS_2薄膜和单晶六方ReS_2薄片的CVD生长及其光电性能。此外,提出了生长机制,并进行了模拟研究。基于ReS 2薄片的高性能光电探测器显示出604 A中心点W-1的高响应率、1.50 × 10(5)%的高外量子效率和2 ms的快速响应时间。然而,它仍然表现出比其它报道的CVD生长的基于ReS 2的光电探测器(大约10(4)-10(5)ms)快得多的响应时间(大约10(3)ms)。ReS 2的这些优良性质使其在二维光电子学中具有广阔的应用前景。
Rhenium disulfide (ReS2) is attracting more and more attention for its thickness-depended direct band gap. As a new appearing 2D transition metal dichalcogenide, the studies on synthesis method via chemical vapor deposition (CVD) is still rare. Here a systematically study on the CVD growth of continuous bilayer ReS2 film and single crystalline hexagonal ReS2 flake, as well as their corresponding optoelectronic properties is reported. Moreover, the growth mechanism has been proposed, accompanied with simulation study. High-performance photodetector based on ReS2 flake shows a high responsivity of 604 A center dot W-1, high external quantum efficiency of 1.50 x 10(5) %, and fast response time of 2 ms. ReS2 film-based photodetector exhibits weaker performance than the flake one; however, it still demonstrates a much faster response time (approximate to 10(3) ms) than other reported CVD-grown ReS2-based photodetector (approximate to 10(4)-10(5) ms). Such good properties of ReS2 render it a promising future in 2D optoelectronics.