High Breakdown-Voltage (>2200 V) AlGaN-Channel HEMTs With Ohmic/Schottky Hybrid Drains
High Breakdown-Voltage (>2200 V) AlGaN-Channel HEMTs With Ohmic/Schottky Hybrid Drains
复制标题
DOI：
10.1109/jeds.2018.2864720
复制
发表时间：
2018
影响因子：
2.3
通讯作者：
Weihang Zhang;Jincheng Zhang;Ming Xiao;Li Zhang;Y. Hao
中科院分区：
文献类型：
--
作者：
Weihang Zhang;Jincheng Zhang;Ming Xiao;Li Zhang;Y. Hao
本文在具有AlGaN通道和新型欧姆/肖特基混合漏极触点的高电子迁移率晶体管（hemt）中实现了超过2200 V的高击穿电压，这是迄今为止在AlGaN通道hemt上实现的最高击穿电压。通过AlGaN通道和湿处理，该器件具有7 × 10^{9}$的高开/关比和64 mV/ 10的低亚阈值摆幅。此外，它还具有优异的高温输出特性和${I} _{D}$ - ${V} _{D}$动态特性。尽管AlGaN通道和欧姆/肖特基混合漏极对导通电阻都有一定的影响，因为它们具有更高的片电阻和漏极接触电阻，但这些结果表明了具有混合漏极结构的AlGaN通道hemt在高压应用中的重要性和潜力。
In this paper, a high breakdown voltage of more than 2200 V in high-electron-mobility transistors (HEMTs) with AlGaN channel and a novel ohmic/Schottky-hybrid drain contact is achieved, which is the record breakdown voltage ever achieved on AlGaN-channel HEMTs. The fabricated device exhibits a high on/off ratio of $7\times 10^{9}$ and a low subthreshold swing of 64 mV/decade, enabled by the AlGaN channel and wet treatment. Furthermore, it exhibits excellent high-temperature output characteristics and dynamic ${I} _{D}$ – ${V} _{D}$ characteristics. Even though both the AlGaN channel and the ohmic/Schottky-hybrid drain have certain impact on the on-state resistance because of the higher sheet resistance and drain contact resistance, these results indicate the significance and potential of AlGaN-channel HEMTs with a hybrid drain architecture in high-voltage applications.