Optimization of noise and responsivity in CMOS active pixel sensors for detection of ultralow-light levels

Optimization of noise and responsivity in CMOS active pixel sensors for detection of ultralow-light levels
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优化 CMOS 有源像素传感器中的噪声和响应度,以检测超低光水平

DOI:
10.1117/12.275185
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发表时间:
1997
期刊:
Electronic imaging
影响因子:
--
通讯作者:
B. Pain
B. Pain
中科院分区:
--
文献类型:
--
作者:
O. Yadid;Karmak Mansoorian;E. Fossum;B. Pain

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在本文中,我们提出的CMOS有源像素传感器的设计和操作的超低光水平检测的调查结果。我们提出了一个详细的APS像素和信号链的噪声模型。利用噪声模型,我们已经开发出APS像素设计,可以实现超低噪声和高响应度。我们目前的结果,从两个测试芯片,表明(1),小于5电子的读取噪声是可能的CMOS APS通过减少像素晶体管的尺寸,和(2),高响应度时,可以实现光电二极管的填充因子降低。
In this paper, we present results of the investigation of the design and operation of CMOS active pixel sensors for detection of ultra-low light levels. We present a detailed noise model of APS pixel and signal chain. Utilizing the noise model, we have developed APS pixel designs that can achieve ultra-low noise and high responsivity. We present results from two test chips, that indicate (1) that less than 5 electrons of read noise is possible with CMOS APS by reducing the size of the pixel transistors, and (2) that high responsivity can be achieved when the fill-factor of the photodiode is reduced.